PRODUCT
PECVD
COSMOS –L200
SPECIFICATIONS
| Deposition materials | SiO2, Si3N4, Poly Si, n+ doped poly, p+ doped poly,.. |
|---|---|
| Substrate size | Max. 8 inch |
| Product yield | Piece to 8inch 1 wafer/ run, 3 wafers/run@4inch |
| Substrate heater | > 400℃ |
| Plasma power | 600W@13.56MHz or 1Kw |
| Pressure control | Throttle valve with baratron gauge (F. S. 10 Torr) |
| Ultimate pressure | < 5.0E-3 Torr |
| Loadlock chamber | < 5.0E-3 Torr |
| Vacuum pump | Dry pump |
| Control | PC control (UPRO software) |
| Option | TMP, Cassette type loadlock |
| Dimension (W*D*H) | 1,452mm X 900mm X 1,390mm |