PRODUCT

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RTP

PRODUCT
INTRODUCTION

1,250℃ Heating Test

Substrate	4inch Si Wafer
P	700
I	6
D	1
Output Power Limit	90%
Base Pressure	ATM
Gas Flow	N2 1,000 SCCM
Process Pressure	ATM

RTP

Time(sec)	Temp. (℃)	Power(%)
0	27	0
5	52	90
10	954	80.3
15	1,173	81.3
20	1,226	83.5
25	1,243	84
30	1,249	83.9
35	1,251	83.6
40	1,252	83.3
45	1,252	82.9
50	1,252	82.8
55	1,251	82.6
60	1,251	82.4

Anneal Hold Time Test : ≥ 35min @1,000℃

Substrate	4inch Si Wafer
P	700
I	6
D	1
Output Power Limit	77%
Base Pressure	Vacuum (Over Range)
Gas Flow	-
Process Pressure	Vacuum (Over Range)

RTP

Time(sec)	Temp. (℃)	Power(%)
0s	75	0
5s	75	77.0
10s	351	65.9
15s	731	68.1
20s	908	67.2
25s	980	65.9
30s	995	65.8
1m	1,002	64.9
3m	1,000	62.8
5m	1,001	60.4
10m	1,001	55.3
15m	1,000	53.4
20m	1,000	52.7
25m	1,000	52.7
30m	1,000	52.9
35m	1,000	53.9

Application

HEMT TLM TEST

RTP

RTP

Fast cooling @ 800℃, Silicon wafer

RTP

Real RTP-100

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Real RTP-100

Real RTP-150

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Real RTP-150

Real RTP-200

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Real RTP-200

Real RTP-Mini

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Real RTP-Mini

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