PRODUCT
RTP
Real RTP-200
SPECIFICATIONS
| Application | Rapid Thermal Annealing (RTA) Rapid Thermal Oxidation (RTO) Rapid Thermal Nitridation (RTN) Rapid Thermal Diffusion (RTD) Ohmic Contact Annealing Crystallization |
|---|---|
| Product Sample | Si, Sapphire, Glass, Ceramic, etc. |
| Substrate Size | 8inch |
| Substrate Holder | Standard : Quartz (Pin) / Option : SiC coated graphite |
| Temperature Range | 150~1,250℃ |
| Heating Rate | 10~150℃/sec for Silicon wafer 10~40℃/sec for Substrate on SiC coated graphite susceptor |
| Control Zone | 6-Zone |
| Temperature Uniformity | ≤ ±1.5% (@800℃, Si wafer without SiC coated graphite susceptor) ≤ ±1.0% (@800℃, Si wafer with SiC coated graphite susceptor) |
| Temperature Accuracy | ≤ ±3℃ |
| Temperature Repeatability | ≤ ±3℃ |
| Vacuum | Standard : 5.0E-3 Torr / Option : 1.0E-6 Torr |
| Gas Supply | 5 channels (Extensible) |
| Control | PC control |
| Dimension (w*d*h) | 1,300mm*820mm*1,300mm |