PRODUCT
ALD
SPACE-S
SPECIFICATIONS
| Thermal ALD / PEALD | |
| Process | Metal : Ru, Ti, Co, … Oxide : Al2O3 , HfO2, TiO2, SnO2, NiOx , ZnO, ZrO, SiO2,RuO,... Nitride : TiN, TaN,.. |
| Substrate Size | Piece to Max. 12 inch |
| Source injection | Dual type showerhead |
| Substrate heater temperature | RT to Max. 450℃ (@ wafer) |
| No of precursor canister | Up to 4 sets |
| Canister heating | RT to 150℃ |
| RF power | 600W @13.56Mhz |
| Ultimate pressure | ≤ 5.0×10-3 Torr |
| Pump | Dry pump or Rotary pump |
| Loadlock chamber | 1 wafer to Max. 10 wafers |
| Gas Supply | 3 channels (Extensible) |
| Deposition uniformity | ≤ ±3 % |
| System control | PC control (UPRO software) |
| Option | Canister temperature 200℃, Cassette type loadlock |
| Dimension (w*d*h) | 2,000mm*650mm*1,400mm |