Thermal ALD / PEALD
Process Metal : Ru, Ti, Co, …
Oxide : Al2O3 , HfO2, TiO2, SnO2, NiOx , ZnO, ZrO, SiO2,RuO,...
Nitride : TiN, TaN,..
Substrate Size Piece to Max. 8 inch
Source injection Dual type showerhead or Travelling
Substrate heater temperature RT to Max. 350℃ (@ wafer)
No of precursor canister Up to 4 sets
Canister heating RT to 150℃
RF power 600W @13.56Mhz
Ultimate pressure ≤ 5.0×10-3 Torr
Pump Dry pump or Rotary pump
Deposition uniformity ≤ ±3 %
System control PC control (UPRO software)
Option Canister temperature 200℃
Dimension (w*d*h) 870mm*1,070mm*1,100mm