PRODUCT
LPCVD & Furnace
PYRO-H
SPECIFICATIONS
| Applications | SiO2, Si3N4, Poly Silicon , doped(N+, P+) ploy Silicon.. deposition Low stress nitride film LTO/HTO deposition Wet /Dry oxidation Diffusion(N+, P+) , Drive-in Anneal |
|---|---|
| Substrate size | 4 to max. 8 inch wafer |
| Product yield | Max. 50 wafers/ run |
| Heater temperature | Max. 1,250℃ |
| Heater control zone | 1 zone to 5 zone |
| Load station | Automatic loading/unloading by LM guide |
| Ultimate pressure | < 5.0E-3 Torr |
| Vacuum pump | Dry pump or Rotary pump |
| Control | PC control (UPRO software) |