PRODUCT
LPCVD & Furnace
PYRO-BENCH
SPECIFICATIONS
| Applications | SiO2, Si3N4, Poly Silicon,.. Wet /Dry oxidation Diffusion(N+, P+) , Drive-in Anneal |
|---|---|
| Substrate size | Piece to max. 4 inch wafer |
| Product yield | Max. 10 wafers/ run |
| Heater temperature | Max. 1,250℃ |
| Heater control zone | 1 zone |
| Load station | Manual loading |
| Ultimate pressure | < 5.0E-3 Torr |
| Vacuum pump | Dry pump or Rotary pump |
| Control | PC control or Manual |