PRODUCT
DRY ETCHER
PERI-ICP Series
SPECIFICATIONS
| Etching material | Metal & Dielectric material etching |
|---|---|
| Substrate size | Max. 8inch |
| Product yield | 1(one) wafer/run |
| Source(gas) injection type | Showerhead type |
| Chuck unit |
Chuck cooling by chiller Substrate back side He cooling Mechanical wafer chucking with clamp |
| Power supply | Bias : RF power Max.2kW@13.56MHz ICP source : RF power Max.3kW@13.56MHz |
| Ultimate pressure | < 5.0E-6 Torr (TMP & Dry pump) |
| Pressure control | Pendulum valve, baratron gauge |
| Loadlock chamber | Ultimate pressure : < 5.0E-3Torr (Dry pump or Rotary pump ) |
| Gas delivery | SF6, CHF3, CF4, C4F8, BCl3,Cl2O2, Ar, He,… |
| Control | PC control (UPRO software) |
| Option | Electro static chuck, Cassette type loadlock |
| System dimension (W*D*H) | 2,050mm X 800mm X 1,600mm |