PRODUCT
E beam evaporator
SEE-7
SPECIFICATIONS
| Deposition materials | Metal : Ag, Al, Au, Cu, Sn, Ti, Pt, Ge, Ni, Au,.. Oxide : SiO2, TiO2, Al2O3, Ta2O5,… TCO : ITO,… |
|---|---|
| Substrate size | Max. 8 inch |
| Product yield | 22 wafers/run@4inch, 9 wafers/run@6inch, 3 wafers/run@8inch |
| Lamp heater | Max. 200℃ |
| E-beam gun | 40ccx4pk, 25ccx4pk, 15ccx6pk or 7cc*4pk |
| E-beam power supply | 6Kw , 10Kw OR 15Kw |
| Pocket selector | 6 pocket indexer |
| Beam sweep controller | Digital sweep control |
| Thickness controller | Single Q’tz crystal sensor & controller or dual sensor |
| Ultimate pressure | < 5.0E-7 Torr (Cryo pump or TMP) |
| Control | PC control (UPRO software) |
| Option | Dual electron gun, Ion source, Planetary dome, Double or 6 crystal sensors |
| Dimension (W*D*H) | 1,350mm X 2,100mm X 2,200mm |